| PART |
Description |
Maker |
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| FQD3N60CTMWS FQU3N60C |
N-Channel QFETMOSFET 600V, 2.4A, 3.4
N-Channel QFET® MOSFET 600V, 2.4A, 3.4Ohms
|
Fairchild Semiconductor
|
| FQI6N60C FQB6N60C FQB6N60CTM |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STD1NC60 STD1NC60T4 STD1NC60-1 |
N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMesh⑩II MOSFET N沟道600V 7ohm - 1.4A的DPAK /像是iPak PowerMesh第二MOSFET的⑩
N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMesh?II MOSFET
N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMeshII MOSFET
N-CHANNEL 600V 7 OHM 1.4A DPAK/IPAK POWERMESH II MOSFET
N-CHANNEL 600V 7 OHM 1.4A DPAK/IPAK POWERMESH II MOSFET
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| STW12NB60 7799 |
12 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
CONNECTOR ACCESSORY
N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh⑩II MOSFET
From old datasheet system
N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET
N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh?II MOSFET
N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STW16NB60 |
N-CHANNEL 600V - 0.3ohm - 16A TO-247 PowerMeshMOSFET N沟道600V 0.3ohm - 16A条，247 PowerMesh⑩MOSFET
N-CHANNEL 600V - 0.3ohm - 16A TO-247 PowerMesh⑩ MOSFET
N-CHANNEL 600V 0.3 OHM 16A TO-247 POWERMESH MOSFET
N-CHANNEL 600V - 0.3ohm - 16A TO-247 PowerMesh MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| HGTG30N60C3D FN4041 |
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(63A, 600V, UFS系列 N沟道绝缘栅双极型晶体 63 A, 600 V, N-CHANNEL IGBT, TO-247
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| SSU1N60B SSR1N60B SSR1N60BTM SSU1N60BTU |
600V N-Channel MOSFET
600V N-Channel B-FET / Substitute of SSP1N60A
600V N-Channel B-FET / Substitute of SSU1N60A
|
FAIRCHILD[Fairchild Semiconductor]
|
| FCH47N60F FCA47N60F109 |
N-Channel SuperFETFRFETMOSFET 600V, 47A, 73m
N-Channel SuperFETMOSFET 600V, 47A, 70m
|
Fairchild Semiconductor
|
| FQPF12N60 FQPF12N60T |
600V N-Channel MOSFET
600V N-Channel QFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQU1N60 FQD1N60 FQD1N60TM FQU1N60TU |
600V N-Channel QFET
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
